This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...
Diodes has expanded its series of automotive-compliant bipolar transistors with 12 NPN and PNP devices designed to achieve ultra-low V CE(sat). With a saturation voltage of just 17 mV at 1 A and ...
Also called a "bipolar junction transistor" (BJT), it is one of two major transistor categories; the other is "field-effect transistor" (FET). Although the first transistor was bipolar and the first ...
A new family of automotive-rated NPN and PNP bipolar transistors bring low losses and high reliability to switching, regulation/conversion, and driving applications. Typical applications include ...
The company’s first bipolar transistors in its miniature PowerDI5 surface-mount package are designed on a fifth-generation matrix emitter process, yielding a range of 12 NPN and PNP transistors with a ...
The invention of the transistor in 1947 by Shockley, Bardeen and Brattain at Bell Laboratories ushered in the age of microelectronics and revolutionized our lives. First, so-called bipolar transistors ...
2N2222 devices used, but practically any junkbox NPN will do Electromagnetic fields are everywhere, all around us. Some are generated naturally, but in vast majority of cases, it’s we humans that are ...
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