SemiQ Inc. has expanded its 1200 V Gen3 SiC MOSFET line with five SOT-227 power modules offering RDS(on) values of 7.4 mΩ, 14 ...
The DGD0506 and DGD0507 high-frequency gate-driver ICs introduced by Diodes Incorporated are designed for driving two external N-channel MOSFETs in a half-bridge configuration. A 50V rating suits a ...
The study of Schottky barrier (SB) MOSFETs with metallic source and drain contacts is expanding as a result of recent developments in the semiconductor industry. Instead of the usual impurity-doped ...
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