This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance. Insets ...

The varactor diode capitalizes on the properties of the depletion layer of a p-n diode. Under reverse bias, the carriers in each region-holes in the p type and electrons in the n type-move away from ...

A reconfigurable device that can be a p-n diode, a MosFET or a BJT has been made by researchers at SUNY-Polytechnic Institute in Albany, New York. “We can form a single device that can perform the ...

It is known that the p-n diode can be the basis of an accurate thermometer for cryogenic temperatures up to about 200°C. A constant current is maintained through the diode and the voltage across it ...

WASHINGTON, D.C., Dec. 15, 2015 - A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of ...

Members can download this article in PDF format. Power systems employ diodes to perform a variety of functions. For example, diodes can protect against damage due to power-source reverse-polarity ...

(Nanowerk News) Researcher at iGaN Lab, University of Science and Technology of China, have developed a multifunctional three-terminal diode that functions both as a light emitter and a detector. This ...