A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...
Tom's Hardware on MSN
Samsung touts 96% lower-power NAND design — researchers investigate design based on ferroelectric transistors
Samsung researchers have published a detailed account of an experimental NAND architecture that aims to cut one of the ...
Metal-oxide-semiconductor field-effect transistors (MOSFETs) have revolutionized the world of electronics due to their remarkable performance and widespread applications. The MOSFET transistor is a ...
Negative capacitance field-effect transistors (NCFETs) represent a transformative approach in the design of low-power electronic devices. By integrating ferroelectric materials into the gate structure ...
Samsung’s research division has taken a swing at the long-standing limitations of traditional NAND flash and introduced a ...
Fraunhofer and the Taiwanese research institute TSRI are developing ferroelectric field-effect transistors (FeFETs) made from hafnium oxide to produce energy efficient memory ICs.
Recently in material science news from China we hear that [Hailin Peng] and his team at Peking University just made the world’s fastest transistor and it’s not made of silicon. Before we tell you ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback