Abstract: GaN heterojunction field-effect transistors (HFETs) in the 600-V class are relatively new in commercial power electronics. The GaN Systems GS66508 is the first commercially available 650-V ...
Abstract: In order to evaluate the feasibility of newly developed GaN devices in a cryogenic-cooled converter, this paper characterizes a 650 V enhancement-mode Gallium-Nitride heterojunction ...
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