Abstract: The complementary field-effect transistor (CFET) with stacked N-type FET (NFET) and P-type FET (PFET) is an attractive approach to shrink the footprint of multiple devices at circuit level ...
Abstract: An accurate physics-based capacitance model is developed covering full-region operations of silicon TFET (Si-TFET) with all biasing conditions. The intrinsic and parasitic capacitances are ...
When it comes to hard problems, computer scientists seem to be stuck. Consider, for example, the notorious problem of finding the shortest round-trip route that passes through every city on a map ...
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